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Strong collaboration with leading nanofabrication centers worldwide drives rapid enhancements and allows us to provide the most advanced capabilities to our users, improving their efficiency and effectiveness. Layouteditor license key full#Performing traditional “Trial & Error” optimizations is very expensive and time consuming.Īdvanced techniques available include: “model-based undersize-overdose” enabling ultra-high resolution in difficult scenarios, 3D PEC for three dimensional resist profiles in single and multi-layer resists, and full process calibration with simulation for quick development of new innovative solutions. Additionally, PEC eliminates the need to experimentally adjust the exposure dose for each layout thereby increasing productivity and process reproducibility. PEC is essential for improving the exposure quality by automatically adjusting exposure doses for optimum CD (critical dimension) uniformity and contrast. Applying techniques such as “bulk & sleeve” or “coarse & fine” combined with proximity effect correction (PEC) to easily and effectively achieve high resolution, smooth edges at increased throughput. The user can instantly visualize and quickly optimize the exposure process, including field and shot position. Examples include: optimized fracturing for a significant reduction in shot placement artifacts, automated floating field to avoid /reduce field placement and stitching issues, user controlled field placement, and enhanced multi pass Interfaces for all major electron and laser-beam exposure tools are developed in close cooperation with machine vendors and are continuously optimized for the best exposure results, thereby extending the limits of these systems by advanced data preparation. It gives the user a large array of functions for extracting, combining and modifying the layout for an optimum exposure.
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